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Subject | Spin Motive Force and Spin Hall Effect in Magnetic Nanostructures (Spin Motive Force and Spin Hall Effect in Magnetic Nanostructures) | |
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TYPE | 특별 강연 | |
DATE/TIME | 2008-08-25 ~ 2008-08-25 | |
PLACE | APCTP Seminar Room (APCTP Seminar Room) | |
SPEAKER | Prof. Sadamichi Maekawa (Prof. Sadamichi Maekawa) | |
AFFILIATION | Tohoku University (Tohoku University ) | |
* 행사명 : Spin Motive Force and Spin Hall Effect in Magnetic Nanostructures * 연 사 : Prof. Sadamichi Maekawa * 소 속 : Institute for Materials Research, Tohoku University * 일 시 : Aug , 25(Mon) PM 3:00 * 장 소 : Hogil Kim Memorial Bldg. 512, POSTECH * 주 최 : APCTP, POSTECH * Title : Spin Motive Force and Spin Hall Effect in Magnetic Nanostructures * Speaker : Prof. Sadamichi Maekawa * Affiliation : Institute for Materials Research, Tohoku University * Date : Aug , 25(Mon) PM 3:00 * Place : Hogil Kim Memorial Bldg. 512, POSTECH * Hosted by APCTP, POSTECH * Abstract: In a device consisting of a ferromagnet (F) and a non* magnetic metal or semiconductor(N), the spin polarized current is injected from F into N, and the spin current and spin accumulation occur in the spin diffusion length (λN), which is in the range of a few 10 nm – a few μm depending on materials. Therefore, in the device with size of the order of λN, the spin current and spin accumulation give rise to a variety of spin dependent phenomena[1]. Here, I will propose two novel properties induced by spin current in nanostructures. (ⅰ)The spin current in F transfers its spin angular momentum and energy to the magnetic background. The transferred momentum and energy result in the dynamics of magnetic background and electromotive force, respectively[2,3]. (ⅱ)The spin current injected into N induces the charge current in the perpendicular direction due to the spin* orbit interaction. It is also possible that the charge current in N is converted into the spin current in the perpendicular direction. Such devices are called the non* local spin Hall devices [4,5,6] . The basic concepts of the conversion between spin current and charge current will be discussed. [1] Concepts in Spin Electronics, ed. S. Maekawa ( Oxford University Press, 2006). [2] S. Barnes and S. Maekawa : Phys. Rev. Lett. 95, 107204 (2005). [3] S. Barnes and S. Maekawa: Phys. Rev. Lett. 98, 246601 (2007). [4] S. Takahashi and S. Maekawa: Phys. Rev. Lett. 88, 116601 (2002). [5] T. Kimura et al.: Phys. Rev. Lett. 98, 156601 (2007). Attach Files |