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    제목 Spin Motive Force and Spin Hall Effect in Magnetic Nanostructures (Spin Motive Force and Spin Hall Effect in Magnetic Nanostructures)
    TYPE Distinguished Lectures
    DATE/TIME 2008-08-25 ~ 2008-08-25
    PLACE APCTP Seminar Room (APCTP Seminar Room)
    SPEAKER Prof. Sadamichi Maekawa (Prof. Sadamichi Maekawa)
    AFFILIATION Tohoku University (Tohoku University )
    * 행사명 : Spin Motive Force and Spin Hall Effect in Magnetic Nanostructures
    * 연   사 : Prof. Sadamichi Maekawa
    * 소   속 : Institute for Materials Research, Tohoku University
    * 일   시 : Aug , 25(Mon)  PM 3:00
    * 장   소 : Hogil Kim Memorial Bldg. 512, POSTECH
    * 주   최 : APCTP,  POSTECH 


    * Title : Spin Motive Force and Spin Hall Effect in Magnetic Nanostructures
    * Speaker : Prof. Sadamichi Maekawa
    * Affiliation : Institute for Materials Research, Tohoku University
    * Date : Aug , 25(Mon)  PM 3:00
    * Place : Hogil Kim Memorial Bldg. 512, POSTECH
    * Hosted by APCTP,  POSTECH 
    * Abstract:  
    In a device consisting of a ferromagnet (F) and a non* magnetic metal or semiconductor(N), the spin polarized current is injected from F into N, and the spin current and spin accumulation occur in the spin diffusion length (λN), which is in the range of a few 10 nm – a few μm depending on materials. Therefore, in the device with size of the order of λN, the spin current and spin accumulation give rise to a variety of spin dependent phenomena[1]. Here, I will propose two novel properties induced by spin current in nanostructures.
    (ⅰ)The spin current in F transfers its spin angular momentum and energy to the magnetic background. The transferred momentum and energy result in the dynamics of magnetic background and electromotive force, respectively[2,3].
    (ⅱ)The spin current injected into N induces the charge current in the perpendicular direction due to the spin* orbit interaction. It is also possible that the charge current in N is converted into the spin current in the perpendicular direction. Such devices are called the non* local spin Hall devices [4,5,6] .
    The basic concepts of the conversion between spin current and charge current will be discussed.
    [1] Concepts in Spin Electronics, ed. S. Maekawa ( Oxford University Press, 2006).
    [2] S. Barnes and S. Maekawa : Phys. Rev. Lett. 95, 107204 (2005).
    [3] S. Barnes and S. Maekawa: Phys. Rev. Lett. 98, 246601 (2007).
    [4] S. Takahashi and S. Maekawa: Phys. Rev. Lett. 88, 116601 (2002).
    [5] T. Kimura et al.: Phys. Rev. Lett. 98, 156601 (2007).

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